Abstract
Over a decade it has been proved that electron doping and electron-phonon coupling play a vital role in controlling the wide band gap issues of some transition metal oxide within density functional theory. However, electron doping and electron-phonon mechanism alone cannot give an excellent description of the performance of photocatalytic in Hex-WO3. In this study, we systematically investigate the effect of Single atom transition metal doping and introduce the Hubbard correction. The electronic structure calculations on both Hex-WO3 and AϰW1–ϰO3 (A=Mn, Fe) using density functional theory with Hubbard (DFT+) were carried out. We have found that presence of U=5.8eV for W in optimizing pure Hex-WO3 produced a stable structure only with overestimation in crystal parameters, while the presence of Mn and Fe Impurities, as well as Hubbard correction (U=4.6eV for Mn and U=3.8eV for Fe) produced a stable structure with high anisotropic distortion in the lattice parameters and negative formation energies of about -1.992 eV and -1.651 eV for Mn and Fe doping respectively, while for the electronic properties, the present of shows that Hex-WO3 is direct wide gap material with a gap of about 2.7eV which is also an overestimation. But the presence of Mn and Fe impurities shrink the band gap and changes the band edge from nonmagnetic WO3 to AϰW1–ϰO3 (A=Mn, and Fe) ferromagnetism with 2.7 µB and antiferromagnetic with 1.815µB magnetic moment per defect in case of Mn and Fe doping respectively, indicating that MnϰW1 – ϰO3 can be a suitable material for magnetic water splitting.