Abstract
In this work, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was utilized to study the interface defect densities with varying absorber layer thickness of perovskite solar cells. The planar heterojunction n-i-p structure was defined as 2D-MoTe2/CH3NH3PbI3/Cu2O, and its performance was simulated. Power conversion efficiency > 23% was realized at < 1014 cm−3 defect density at 2D-MoTe2/CH3NH3PbI3 and CH3NH3PbI3/Cu2O interfaces and >1.0 µm thickness of absorber layer. The study was carried out at 300k temperature. These results show constraints on numerical simulation for correlation between defect mechanism and performance.